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| UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. NPN SILICON TRANSISTOR 1 TO-220 FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100 * Inductive switching matrix 2 to 4 Amp, 25 and 100 . . . tc @ 3A, 100 is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information 1 TO-220F *Pb-free plating product number: MJE13005L APPLICATIONS * Switching regulator's, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits ORDERING INFORMATION Order Number Normal Lead Free Plating MJE13005-TA3-T MJE13005L-TA3-T MJE13005-TF3-T MJE13005L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube MJE13005L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1)T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R203-018,D MJE13005 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current Emitter Current Continuous Peak (1) Continuous Peak (1) Continuous SYMBOL VCEO(SUS) VCBO VEBO Ic ICM IB IBM IE NPN SILICON TRANSISTOR RATINGS 400 700 9 4 8 2 4 6 UNIT V V V A A A A A 12 A Peak (1) IEM Total Power Dissipation at Ta=25 2 W PD Derate above 25 16 mW/ 75 W Total Power Dissipation at TC=25 PD Derate above 25 600 mW/ Operating and Storage Junction Temperature Range TJ , TSTG -65 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (1) Pulse Test : Pulse Width=5ms,Duty Cycle10% SYMBOL JA JC MAX 62.5 1.67 UNIT /W /W ELECTRICAL CHARACTERISTICS (Tc=25 , unless otherwise specified) PARAMETER *OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage Collector Cutoff Current SYMBOL TEST CONDITIONS MIN 400 1 mA 5 1 mA TYP MAX UNIT V Emitter Cutoff Current SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with Base Reverse Biased *ON CHARACTERISTICS (1) DC Current Gain VCEO(SUS) Ic=10mA , IB=0 VCBO=Rated Value, VBE(OFF)=1.5 V ICBO VCBO=Rated Value, VBE(OFF)=1.5V, Tc=100 IEBO VEB=9V, Ic=0 Is/b RBSOA hFE1 hFE2 Ic=1A, VCE=5V Ic=2A, VCE=5V Ic=1A, IB=0.2A Ic=2A, IB=0.5A Ic=4A, IB=1A Ic=2A, IB=0.5A, Ta=100 Ic=1A, IB=0.2A Ic=2A, IB=0.5A Ic=2A, IB=0.5A, Tc=100 See Figure 11 See Figure 12 10 8 60 40 0.5 0.6 1 1 1.2 1.6 1.5 4 65 Collector-Emitter Saturation Voltage VCE(SAT) V V V V V V V MHz pF Base-Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance VBE (SAT) fT Cob Ic=500mA, VCE=10V, f=1MHz VCB=10V, IE=0, f=0.1MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R203-018,D MJE13005 ELECTRICAL CHARACTERISTICS (Cont.) NPN SILICON TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time tD Rise Time tR Vcc=125V, Ic=2A, IB1=IB2=0.4A, tP=25s, Duty Cycle1% Storage Time tS Fall Time tF * Pulse Test: Pulse Width=300s, Duty Cycle2% MIN TYP MAX UNIT 0.025 0.3 1.7 0.4 0.1 0.7 4 0.9 s s s s Table 1.Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +5V 1N4933 33 MJE210 L MR826* +125V RESISTIVE SWITHCING Vcc TEST CIRCUITS 0.001 F 5V Pw DUTY CYCLE 10% tr, tf 10ns 68 1k 33 1N4933 2N2222 1k +5V 1N4933 0.02 F NOTE PW and Vcc Adjusted for Desired Ic RB Adjusted for Desired IB1 270 1k 2N2905 47 1/2W MJE200 100 -VBE(off) RB IB T.U.T. Ic Vclamp *SELECTED FOR VCE 1kV RB D1 -4.0V TUT Rc SCOPE 5.1k 51 Coil Data : FERROXCUBE core #6656 Full Bobbin ( ~ 16 Turns) #16 GAP for 200 H/20 A Lcoil=200 H Vcc=20V Vclamp=300V Vcc=125V Rc=62 D1=1n5820 or Equiv. RB=22 CIRCUIT VALUES OUTPUT WAVEFORMS TEST WAVEFORMS tf CLAMPED Ic Ic(pk) t1 VCE VCE or Vclamp TIME t2 t tf t1= tf UNCLAMPED t2 t t1 Adjusted to Obtain Ic Lcoil(Icpk) Vcc Lcoil(Icpk) Vclamp Test Equipment Scope-Tektronics 475 or Equivalent +10 V 25 S 0 -8V tr, tf<10ns Duty Cycly=1.0% RB and Rc adjusted for desired IB and Ic t2= UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R203-018,D MJE13005 RESISTIVE SWITCHING PERFORMANCE Figure 1. Turn-On Time 1 10 NPN SILICON TRANSISTOR Figure 2. Turn-Off Time tS 5 0.5 tR Time, t () 0.2 Vcc=125V Ic/IB=5 TJ=25 Vcc=125V Ic/IB=5 TJ=25 2 Time, t () 0.1 1 0.05 tD @ VBE(OFF)=5V 0.5 0. 3 tF 0.02 0.2 0.01 0.04 0.1 0. 2 0.4 1 2 4 0.1 0. 04 0. 1 0.2 0.5 1 2 4 Collector Current, IC (A) Collector Current, IC (A) Figure 3. Typical Thermal Response [ Z Transient Thermal Resistance, r(t) (Normalized) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 JC(t)] D=0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1 2 Z JC(t )=r(t ) R JC R J C=1. 67 /W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 Tj pk)-TC=P pk Z JC(t) P (PK) t2 DUTY CYCLE D=t1/t2 , 50 10 0 20 0 50 0 1k t1 5 10 20 Time, t (ms) Figure 4. Forward Bias Safe Operating Area 10 5 Figure 5. Reverse Bias Switching Safe Operating Area 4 Collector Current, IC (A) 2 1 0. 5 0.2 0.1 0. 05 0.02 0.01 5 7 10 20 30 50 dc 5 ms Collector Current, IC(pk) (A) 500 s Tc Vclamp 100 IB1=2.0A 3 1ms 2 VBE(off)=9V 1 UTC MJE13005 5V 3V 1.5V UTC MJE13005 70 100 200 300 400 500 0 0 100 200 300 400 500 600 700 800 Collector-Emitter Voltage, VCE (V) Collector-Emitter Clamp Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R203-018,D MJE13005 RESISTIVE SWITCHING PERFORMANCE Figure 6. Forward Bias Power Derating 1 NPN SILICON TRANSISTOR SECOND BREAKDOWN DERATING 0.8 Power Derating Factor 0.6 0. 4 THERMAL DERATING 0.2 0 20 40 60 80 100 120 140 160 Case Temperature, TC ( ) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R203-018,D MJE13005 SAFE OPERATING AREA INFORMATION NPN SILICON TRANSISTOR FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on TC = 25 ; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC25 . Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 4 may be found at any case temperature by using the appropriate curve on Figure 6. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives the complete RBSOA characteristics. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R203-018,D MJE13005 TYPICAL CHARACTERISTICS Figure 7. DC Current Gain 100 70 50 2 NPN SILICON TRANSISTOR Figure 8. Collector Saturation Region Collector-Emitter Voltage, VCE (V) TJ=150 25 TJ=25 1.6 DC Current Gain, hFE Ic=1A 1.2 2A 3A 4A 30 20 -55 0.8 1 0 7 5 VCE=2V - - - - - -VCE=5V 0.4 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 0 0.03 0.05 0.1 0.2 0.3 0.5 0.7 1 2 3 Collector Current, IC (A) Base Current, IB (A) Figure 9. Base-Emitter Voltage Collector-Emitter Saturation Voltage, VCE(SAT) (V) 1.3 0.55 Figure 10. Collector-Emitter Saturation Voltage Ic/IB=4 0.45 Base-Emitter Voltage, VBE (V) 1.1 VBE(SAT) @ IC/IB=4 - - - - - -VBE(ON) @ VCE=2V 0. 9 TJ=-55 25 TJ=-55 0.35 25 0. 25 0. 7 25 0. 5 0.15 150 0.3 0.04 0.06 0.1 0. 2 0.4 0.6 1 2 4 150 0.05 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 Collector Current, IC (A) Collector Current, IC (A) Figure 11. Collector Cutoff Region 10k 2k Figure 12. Capacitance VCE=250V 1k Cib Collector Current, IC ( A) 1k Capacitance, C (pF) Tj=150 100 700 500 300 200 125 100 10 75 50 100 70 50 30 1 25 REVERSE 0.1 -0.4 -0.2 0 FORWARD Cob 0.3 0.5 13 5 10 30 50 100 300 20 +0.2 +0.4 +0. 6 Base-Emitter Voltage, VBE (V) Reverse Voltage, VR (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R203-018,D MJE13005 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R203-018,D |
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